auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 83.75 EUR |
| 10+ | 75.79 EUR |
| 20+ | 75.5 EUR |
| 50+ | 72.23 EUR |
| 100+ | 66.27 EUR |
| 200+ | 64.95 EUR |
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Technische Details IXFN64N60P IXYS
Description: MOSFET N-CH 600V 50A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXFN64N60P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXFN64N60P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 600V 50A 4-Pin SOT-227B |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN64N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227B |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN64N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 50A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 50A; SOT227B; Ugs: ±40V; screw Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 150A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 96mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : IXYS |
Description: MOSFET N-CH 600V 50A SOT227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 50A; SOT227B; Ugs: ±40V; screw Technology: HiPerFET™; PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 150A Power dissipation: 700W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 96mΩ Gate charge: 200nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 200ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |