
auf Bestellung 1011 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 56.99 EUR |
10+ | 42.12 EUR |
100+ | 40.62 EUR |
250+ | 40.52 EUR |
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Technische Details IXFN64N60P IXYS
Description: MOSFET N-CH 600V 50A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V, Power Dissipation (Max): 700W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V.
Weitere Produktangebote IXFN64N60P
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFN64N60P | Hersteller : Littelfuse |
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auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN64N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : IXYS |
![]() Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 96mΩ Pulsed drain current: 150A Power dissipation: 700W Kind of channel: enhancement Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 200nC Technology: HiPerFET™; PolarHV™ Reverse recovery time: 200ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFN64N60P | Hersteller : IXYS |
![]() Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 150A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 50A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 96mΩ Pulsed drain current: 150A Power dissipation: 700W Kind of channel: enhancement Gate-source voltage: ±40V Mechanical mounting: screw Gate charge: 200nC Technology: HiPerFET™; PolarHV™ Reverse recovery time: 200ns |
Produkt ist nicht verfügbar |