auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 65.12 EUR |
| 10+ | 55.81 EUR |
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Technische Details IXFN66N85X IXYS
Description: MOSFET N-CH 850V 65A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote IXFN66N85X nach Preis ab 45.3 EUR bis 71.5 EUR
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IXFN66N85X | Hersteller : IXYS |
 Description: MOSFET N-CH 850V 65A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
auf Bestellung 959 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN66N85X | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 65A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 140A Power dissipation: 830W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 230nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN66N85X | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 65A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 65mΩ Pulsed drain current: 140A Power dissipation: 830W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 250ns Gate charge: 230nC Kind of channel: enhancement |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN66N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 65A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |