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Technische Details IXFN66N85X IXYS
Description: MOSFET N-CH 850V 65A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: SOT-227B, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote IXFN66N85X nach Preis ab 55.22 EUR bis 85.08 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFN66N85X | IXYS |
 Description: MOSFET N-CH 850V 65A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
auf Bestellung 959 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN66N85X | IXYS |
Category: Transistor modules Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A Pulsed drain current: 140A Type of semiconductor module: MOSFET transistor Power dissipation: 830W Gate charge: 230nC Polarisation: unipolar Technology: HiPerFET™; X-Class Drain current: 65A Kind of channel: enhancement Drain-source voltage: 850V Mechanical mounting: screw Electrical mounting: screw Gate-source voltage: ±40V Semiconductor structure: single transistor Case: SOT227B On-state resistance: 65mΩ Reverse recovery time: 250ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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| IXFN66N85X |
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Hersteller: IXYS
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
Description: MOSFET N-CH 850V 65A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 33A, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V
auf Bestellung 959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 79.73 EUR |
| 10+ | 59.83 EUR |
| 100+ | 55.22 EUR |
| IXFN66N85X |
|
Hersteller: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Pulsed drain current: 140A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 230nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 850V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 65mΩ
Reverse recovery time: 250ns
Category: Transistor modules
Description: Module; single transistor; 850V; 65A; SOT227B; screw; Idm: 140A
Pulsed drain current: 140A
Type of semiconductor module: MOSFET transistor
Power dissipation: 830W
Gate charge: 230nC
Polarisation: unipolar
Technology: HiPerFET™; X-Class
Drain current: 65A
Kind of channel: enhancement
Drain-source voltage: 850V
Mechanical mounting: screw
Electrical mounting: screw
Gate-source voltage: ±40V
Semiconductor structure: single transistor
Case: SOT227B
On-state resistance: 65mΩ
Reverse recovery time: 250ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |