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IXFN80N50

Name: IXFN80N50
Brand: IXYS
SKU: 143341-4
Price: 127.04 EUR
Availability: BackOrder

littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn80n50_datasheet.pdf.pdf

Produktcode: 42690

Hersteller:
ZCODE: 8541290090

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Technische Details IXFN80N50

MOSFET, N, SOT-227B
Transistor Type:MOSFET
Transistor Polarity:N
Typ Voltage Vds:500V
Cont Current Id:80A
On State Resistance:0.055ohm
Voltage Vgs Rds on Measurement:10V
Typ Voltage Vgs th:4.5V
Case Style:ISOTOP
Termination Type:Screw
Avalanche Single Pulse Energy Eas:4J
Current Temperature:25`C
Full Power Rating Temperature:25`C
Max Junction Temperature Tj:150`C
Max On State Resistance:0.055ohm
Max Repetitive Avalanche Energy:64mJ
Max Voltage Vds:500V
Max Voltage Vgs th:4.5V
Min Junction Temperature, Tj:-55`C
N-channel Gate Charge:380nC
No. of Transistors:1
Power Dissipation:780W
Power Dissipation Pd:780W
Pulse Current Idm:320A
Rate of Voltage Change dv / dt:5V/ns
Typ Reverse Recovery Time, trr:250ns
Weight:0.000036kg
Transistor Case Style:ISOTOP

Weitere Produktangebote IXFN80N50

Bezeichnung	Hersteller	Beschreibung	Verfügbarkeit
IXFN80N50	Hersteller : Littelfuse	Trans MOSFET N-CH 500V 80A 4-Pin SOT-227B	Produkt ist nicht verfügbar
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IXFN80N50	Hersteller : IXYS	Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 300 Stücke	Produkt ist nicht verfügbar
IXFN80N50	Hersteller : IXYS	Description: MOSFET N-CH 500V 80A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 500mA, 10V Power Dissipation (Max): 700W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9890 pF @ 25 V	Produkt ist nicht verfügbar
IXFN80N50	Hersteller : IXYS	Discrete Semiconductor Modules 500V 80A	Produkt ist nicht verfügbar
IXFN80N50	Hersteller : IXYS	Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 80A; SOT227B; screw; Idm: 320A Technology: HiPerFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 80A Pulsed drain current: 320A Power dissipation: 694W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 55mΩ Gate charge: 380nC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor	Produkt ist nicht verfügbar