IXFN80N60P3 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 600V 66A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 134 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 52.80 EUR |
| 10+ | 40.17 EUR |
| 100+ | 36.49 EUR |
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Technische Details IXFN80N60P3 Littelfuse Inc.
Description: MOSFET N-CH 600V 66A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Weitere Produktangebote IXFN80N60P3 nach Preis ab 43.30 EUR bis 56.14 EUR
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IXFN80N60P3 | Hersteller : IXYS |
MOSFET Modules Polar3 HiPerFET Power MOSFET |
auf Bestellung 251 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 16500 Stücke: Lieferzeit 18-25 Tag (e) |
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IXFN80N60P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 66A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN80N60P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Pulsed drain current: 200A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN80N60P3 | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFN80N60P3 - Leistungs-MOSFET, n-Kanal, 600 V, 66 A, 0.077 ohm, SOT-227B, Modul Transistormontage: Modul Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 66 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 960 Bauform - Transistor: SOT-227B Anzahl der Pins: 4 Produktpalette: Polar3 HiperFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.077 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: No SVHC (07-Jul-2017) |
Produkt ist nicht verfügbar |
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IXFN80N60P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Pulsed drain current: 200A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Reverse recovery time: 250ns |
Produkt ist nicht verfügbar |