IXFN80N60P3 IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 29.5 EUR |
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Technische Details IXFN80N60P3 IXYS
Description: MOSFET N-CH 600V 66A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 66A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V.
Weitere Produktangebote IXFN80N60P3 nach Preis ab 29.5 EUR bis 89.28 EUR
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IXFN80N60P3 | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar3™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 66A Pulsed drain current: 200A Power dissipation: 960W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 77mΩ Gate charge: 0.19µC Kind of channel: enhanced Semiconductor structure: single transistor Reverse recovery time: 250ns Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN80N60P3 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 66A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V Power Dissipation (Max): 960W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
auf Bestellung 288 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN80N60P3 | Hersteller : IXYS |
Discrete Semiconductor Modules Polar3 HiPerFET Power MOSFET |
auf Bestellung 281 Stücke: Lieferzeit 14-28 Tag (e) |
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| IXFN80N60P3 |
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auf Bestellung 16500 Stücke: Lieferzeit 18-25 Tag (e) |
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IXFN80N60P3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 66A 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXFN80N60P3 | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFN80N60P3 - Leistungs-MOSFET, n-Kanal, 600 V, 66 A, 0.077 ohm, SOT-227B, Modul Transistormontage: Modul Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 66 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 960 Bauform - Transistor: SOT-227B Anzahl der Pins: 4 Produktpalette: Polar3 HiperFET Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.077 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 5 SVHC: No SVHC (07-Jul-2017) |
Produkt ist nicht verfügbar |