IXFN82N60P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 600V 72A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
Description: MOSFET N-CH 600V 72A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V
auf Bestellung 287 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 61.81 EUR |
| 10+ | 46.13 EUR |
| 100+ | 41.82 EUR |
Produktrezensionen
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Technische Details IXFN82N60P Littelfuse Inc.
Description: MOSFET N-CH 600V 72A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 41A, 10V, Power Dissipation (Max): 1040W (Tc), Vgs(th) (Max) @ Id: 5V @ 8mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 23000 pF @ 25 V.
Weitere Produktangebote IXFN82N60P nach Preis ab 50.79 EUR bis 63.96 EUR
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IXFN82N60P | Hersteller : IXYS |
 MOSFET Modules DIODE Id82 BVdass600 |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN82N60P Produktcode: 38016
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IXFN82N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B |
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IXFN82N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B |
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IXFN82N60P | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 600V 72A 4-Pin SOT-227B |
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IXFN82N60P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 72A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 75mΩ Gate charge: 240nC Kind of channel: enhancement Reverse recovery time: 200ns Pulsed drain current: 200A Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFN82N60P | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 72A; SOT227B; screw; Idm: 200A Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 72A Power dissipation: 1.04kW Case: SOT227B Gate-source voltage: ±40V On-state resistance: 75mΩ Gate charge: 240nC Kind of channel: enhancement Reverse recovery time: 200ns Pulsed drain current: 200A Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |