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IXFN90N170SK

IXFN90N170SK IXYS


media-3320348.pdf Hersteller: IXYS
MOSFET MSFT SILICON CARBIDE MINI
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+522.14 EUR
10+489.05 EUR
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Technische Details IXFN90N170SK IXYS

Description: SICFET N-CH 1700V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 4V @ 36mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V.

Weitere Produktangebote IXFN90N170SK nach Preis ab 525.69 EUR bis 525.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFN90N170SK IXFN90N170SK Hersteller : IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf Description: SICFET N-CH 1700V 90A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V
Vgs(th) (Max) @ Id: 4V @ 36mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+525.69 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFN90N170SK IXFN90N170SK Hersteller : IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFN90N170SK IXFN90N170SK Hersteller : IXYS media?resourcetype=datasheets&itemid=45fac7dc-a118-4a13-b201-c36d3f84bf39&filename=littelfuse%2520power%2520semiconductors%2520ixfn90n170sk%2520datasheet.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.7kV; 67A; SOT227B; screw; SiC; 376nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.7kV
Drain current: 67A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 23mΩ
Technology: SiC
Kind of channel: enhancement
Gate charge: 376nC
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH