auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 522.14 EUR |
| 10+ | 489.05 EUR |
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Technische Details IXFN90N170SK IXYS
Description: SICFET N-CH 1700V 90A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V, Vgs(th) (Max) @ Id: 4V @ 36mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V.
Weitere Produktangebote IXFN90N170SK nach Preis ab 525.69 EUR bis 525.69 EUR
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IXFN90N170SK | Hersteller : IXYS |
 Description: SICFET N-CH 1700V 90A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 100A, 20V Vgs(th) (Max) @ Id: 4V @ 36mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 376 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 7340 pF @ 1000 V |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFN90N170SK | Hersteller : IXYS |
IXFN90N170SK Transistor modules MOSFET |
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