IXFP10N60P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.15 EUR |
| 20+ | 3.72 EUR |
| 25+ | 2.96 EUR |
| 26+ | 2.80 EUR |
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Technische Details IXFP10N60P IXYS
Description: MOSFET N-CH 600V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V.
Weitere Produktangebote IXFP10N60P nach Preis ab 2.80 EUR bis 6.88 EUR
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IXFP10N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP10N60P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 600V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V |
auf Bestellung 1116 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP10N60P | Hersteller : IXYS |
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auf Bestellung 296 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP10N60P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |