IXFP10N60P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V
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Technische Details IXFP10N60P IXYS
Description: MOSFET N-CH 600V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 740mOhm @ 5A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 25 V.
Weitere Produktangebote IXFP10N60P nach Preis ab 4.47 EUR bis 11.65 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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IXFP10N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 200W Case: TO220AB On-state resistance: 0.74Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 120ns Gate charge: 32nC |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP10N60P | IXYS |
MOSFETs HiPERFET Id10 BVdass600 |
auf Bestellung 223 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFP10N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Gate charge: 32nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Gate charge: 32nC
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.47 EUR |
| IXFP10N60P |
|
Hersteller: IXYS
MOSFETs HiPERFET Id10 BVdass600
MOSFETs HiPERFET Id10 BVdass600
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.65 EUR |
| 10+ | 7.63 EUR |
| 100+ | 5.59 EUR |
| 500+ | 4.74 EUR |
| 1000+ | 4.49 EUR |