auf Bestellung 292 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.29 EUR |
| 10+ | 4.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFP10N80P IXYS
Description: MOSFET N-CH 800V 10A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V.
Weitere Produktangebote IXFP10N80P nach Preis ab 4.42 EUR bis 8.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFP10N80P | Hersteller : IXYS |
 Description: MOSFET N-CH 800V 10A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXFP10N80P | Hersteller : Littelfuse |
Trans MOSFET N-CH 800V 10A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
|||||||||
 |
IXFP10N80P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC |
Produkt ist nicht verfügbar |