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IXFP130N10T2

IXFP130N10T2 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Drain-source voltage: 100V
Drain current: 130A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 10.1mΩ
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 130nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 48 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
21+3.45 EUR
50+3.32 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFP130N10T2 IXYS

Description: MOSFET N-CH 100V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V.

Weitere Produktangebote IXFP130N10T2 nach Preis ab 3.45 EUR bis 4.49 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFP130N10T2 IXFP130N10T2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Drain-source voltage: 100V
Drain current: 130A
Case: TO220AB
Polarisation: unipolar
On-state resistance: 10.1mΩ
Power dissipation: 360W
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 130nC
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.49 EUR
18+4.03 EUR
20+3.58 EUR
21+3.45 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
IXFP130N10T2 IXFP130N10T2 Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixf-130n10t2-datasheet?assetguid=53ea8d95-36ce-45ea-8f7b-5cb34f339de3 Description: MOSFET N-CH 100V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IXFP130N10T2 IXFP130N10T2 Hersteller : IXYS media-3320877.pdf MOSFETs Trench T2 HiperFET Power MOSFET
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