IXFP130N10T2 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.49 EUR |
| 18+ | 4.03 EUR |
| 20+ | 3.58 EUR |
| 50+ | 3.33 EUR |
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Technische Details IXFP130N10T2 IXYS
Description: MOSFET N-CH 100V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V.
Weitere Produktangebote IXFP130N10T2 nach Preis ab 3.58 EUR bis 4.49 EUR
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IXFP130N10T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP130N10T2 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 130A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 65A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V |
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IXFP130N10T2 | Hersteller : IXYS |
MOSFETs Trench T2 HiperFET Power MOSFET |
Produkt ist nicht verfügbar |