
IXFP130N15X3 IXYS

Description: MOSFET N-CH 150V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V
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Technische Details IXFP130N15X3 IXYS
Description: MOSFET N-CH 150V 130A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 65A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5230 pF @ 25 V.
Weitere Produktangebote IXFP130N15X3
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFP130N15X3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXFP130N15X3 | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXFP130N15X3 | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 150V; 130A; 390W; TO220AB; 80ns Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: ultra junction x-class Gate charge: 80nC Kind of channel: enhancement Mounting: THT Case: TO220AB Reverse recovery time: 80ns Drain-source voltage: 150V Drain current: 130A On-state resistance: 9mΩ |
Produkt ist nicht verfügbar |