IXFP14N85X IXYS
Hersteller: IXYSDescription: MOSFET N-CH 850V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220AB (IXFP)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V
auf Bestellung 393 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.53 EUR |
| 50+ | 6.23 EUR |
| 100+ | 5.72 EUR |
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Technische Details IXFP14N85X IXYS
Description: MOSFET N-CH 850V 14A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 550mOhm @ 500mA, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1mA, Supplier Device Package: TO-220AB (IXFP), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1043 pF @ 25 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 460W; TO220AB; 116ns Mounting: THT Polarisation: unipolar Gate charge: 30nC Reverse recovery time: 116ns On-state resistance: 0.55Ω Drain current: 14A Power dissipation: 460W Drain-source voltage: 850V Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO220AB Kind of package: tube Features of semiconductor devices: ultra junction x-class |
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