IXFP16N60P3 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 16A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 10V
Power Dissipation (Max): 347W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.01 EUR |
| 10+ | 9.47 EUR |
| 50+ | 7.52 EUR |
| 100+ | 6.9 EUR |
| 500+ | 5.81 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
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Produktbewertung abgeben
Technische Details IXFP16N60P3 IXYS
Description: MOSFET N-CH 600V 16A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 10V, Power Dissipation (Max): 347W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXFP16N60P3 nach Preis ab 7.25 EUR bis 15.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFP16N60P3 | Ixys Corporation |
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 267 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Power dissipation: 347W Case: TO220AB Mounting: THT Kind of package: tube Drain current: 16A Kind of channel: enhancement Drain-source voltage: 600V On-state resistance: 470mΩ Gate charge: 36nC Polarisation: unipolar |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFP16N60P3 |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 600V 16A 3-Pin(3+Tab) TO-220AB
auf Bestellung 267 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 15.42 EUR |
| 50+ | 8.12 EUR |
| 100+ | 7.25 EUR |
| IXFP16N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Power dissipation: 347W
Case: TO220AB
Mounting: THT
Kind of package: tube
Drain current: 16A
Kind of channel: enhancement
Drain-source voltage: 600V
On-state resistance: 470mΩ
Gate charge: 36nC
Polarisation: unipolar
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)