auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.65 EUR |
| 10+ | 9.57 EUR |
| 50+ | 5.76 EUR |
| 100+ | 5.72 EUR |
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Technische Details IXFP180N10T2 IXYS
Description: MOSFET N-CH 100V 180A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
Weitere Produktangebote IXFP180N10T2 nach Preis ab 5.73 EUR bis 10.77 EUR
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IXFP180N10T2 | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 100V 180A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
auf Bestellung 346 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP180N10T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB |
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IXFP180N10T2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB |
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IXFP180N10T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 66ns Features of semiconductor devices: thrench gate power mosfet Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFP180N10T2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO220AB; 66ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 480W Case: TO220AB On-state resistance: 6mΩ Mounting: THT Gate charge: 185nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 66ns Features of semiconductor devices: thrench gate power mosfet |
Produkt ist nicht verfügbar |