| Anzahl | Privatkunde |
|---|---|
| 1+ | 20.34 EUR |
| 10+ | 12.86 EUR |
| 100+ | 11 EUR |
| 500+ | 10.89 EUR |
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Technische Details IXFP20N85X IXYS
Description: MOSFET N-CH 850V 20A TO220AB, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 850 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXFP20N85X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFP20N85X | Littelfuse Inc. |
 Description: MOSFET N-CH 850V 20A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 850 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Power Dissipation (Max): 540W (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFP20N85X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns Mounting: THT Power dissipation: 540W Gate charge: 63nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 20A Kind of channel: enhancement Drain-source voltage: 850V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 0.33Ω Reverse recovery time: 190ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXFP20N85X |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 20A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 850V 20A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 850 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFP20N85X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Mounting: THT
Power dissipation: 540W
Gate charge: 63nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 850V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 0.33Ω
Reverse recovery time: 190ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH