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IXFP20N85X

IXFP20N85X IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 42 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFP20N85X IXYS

Description: MOSFET N-CH 850V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V.

Weitere Produktangebote IXFP20N85X nach Preis ab 3.12 EUR bis 13.55 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFP20N85X IXFP20N85X Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD263488393820&compId=IXFH(P)20N85X.pdf?ci_sign=7c12a971503592693c6f40300c433ab581bc443f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 63nC
Reverse recovery time: 190ns
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
IXFP20N85X IXFP20N85X Hersteller : IXYS media-3323285.pdf MOSFETs 850V Ultra Junction X-Class Pwr MOSFET
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.55 EUR
10+10.74 EUR
50+9.19 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFP20N85X IXFP20N85X Hersteller : Littelfuse media.pdf Trans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-220AB
Produkt ist nicht verfügbar
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IXFP20N85X IXFP20N85X Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_20n85x_datasheet.pdf.pdf Description: MOSFET N-CH 850V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH