auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.24 EUR |
| 10+ | 7.96 EUR |
| 100+ | 7.76 EUR |
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Technische Details IXFP20N85X IXYS
Description: MOSFET N-CH 850V 20A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 2.5mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V.
Weitere Produktangebote IXFP20N85X nach Preis ab 5.11 EUR bis 5.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXFP20N85X | Hersteller : IXYS |
 IXFP20N85X THT N channel transistors |
auf Bestellung 14 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP20N85X | Hersteller : Littelfuse |
Trans MOSFET N-CH 850V 20A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP20N85X | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 850V 20A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 500mA, 10V Power Dissipation (Max): 540W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
Produkt ist nicht verfügbar |