IXFP22N60P3 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 22A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.57 EUR |
| 10+ | 9.16 EUR |
| 50+ | 7.28 EUR |
| 100+ | 6.68 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFP22N60P3 IXYS
Description: MOSFET N-CH 600V 22A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V.
Weitere Produktangebote IXFP22N60P3 nach Preis ab 6.34 EUR bis 13.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXFP22N60P3 | IXYS |
MOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET |
auf Bestellung 476 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP22N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Case: TO220AB On-state resistance: 390mΩ Mounting: THT Gate charge: 38nC Kind of channel: enhancement Power dissipation: 500W Kind of package: tube |
auf Bestellung 134 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IXFP22N60P3 | Ixys Corporation |
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 143 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXFP22N60P3 |
|
Hersteller: IXYS
MOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET
MOSFETs 600V 22A 0.36Ohm PolarP3 Power MOSFET
auf Bestellung 476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.64 EUR |
| 10+ | 7.31 EUR |
| 100+ | 6.7 EUR |
| 500+ | 6.34 EUR |
| IXFP22N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Case: TO220AB
On-state resistance: 390mΩ
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement
Power dissipation: 500W
Kind of package: tube
auf Bestellung 134 Stücke:
Lieferzeit 14-21 Tag (e)
| IXFP22N60P3 |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 600V 22A 3-Pin(3+Tab) TO-220AB
auf Bestellung 143 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 10.56 EUR |
| 50+ | 8.85 EUR |
| 100+ | 7.97 EUR |