IXFP22N65X2
Produktcode: 197751
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Weitere Produktangebote IXFP22N65X2 nach Preis ab 4.74 EUR bis 13.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IXFP22N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Gate charge: 37nC Features of semiconductor devices: ultra junction x-class |
auf Bestellung 223 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP22N65X2 | Ixys Corporation |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP22N65X2 | IXYS |
Description: MOSFET N-CH 650V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V |
auf Bestellung 3978 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP22N65X2 | IXYS |
MOSFETs MOSFET 650V/22A Ultra Junction X2 |
auf Bestellung 729 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFP22N65X2 |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Gate charge: 37nC
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22A
Power dissipation: 390W
Case: TO220AB
On-state resistance: 0.145Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Gate charge: 37nC
Features of semiconductor devices: ultra junction x-class
auf Bestellung 223 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.68 EUR |
| 18+ | 4.74 EUR |
| IXFP22N65X2 |
|
Hersteller: Ixys Corporation
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220AB
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 9.95 EUR |
| 50+ | 8.03 EUR |
| IXFP22N65X2 |
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Hersteller: IXYS
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
Description: MOSFET N-CH 650V 22A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V
Power Dissipation (Max): 390W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1.5mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.59 EUR |
| 50+ | 7.28 EUR |
| 100+ | 6.68 EUR |
| 500+ | 5.62 EUR |
| 1000+ | 5.27 EUR |
| 2000+ | 5.22 EUR |
| IXFP22N65X2 |
|
Hersteller: IXYS
MOSFETs MOSFET 650V/22A Ultra Junction X2
MOSFETs MOSFET 650V/22A Ultra Junction X2
auf Bestellung 729 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.64 EUR |
| 10+ | 7.31 EUR |
| 100+ | 6.7 EUR |
| 500+ | 6.34 EUR |