auf Bestellung 284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.93 EUR |
| 10+ | 5.83 EUR |
| 50+ | 5.39 EUR |
| 100+ | 5.28 EUR |
| 250+ | 5.17 EUR |
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Technische Details IXFP22N65X2 IXYS
Description: MOSFET N-CH 650V 22A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 1.5mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V.
Weitere Produktangebote IXFP22N65X2 nach Preis ab 3.98 EUR bis 9.03 EUR
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IXFP22N65X2 | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Features of semiconductor devices: ultra junction x-class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 222 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP22N65X2 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22A; 390W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 390W Case: TO220AB On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Features of semiconductor devices: ultra junction x-class |
auf Bestellung 222 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP22N65X2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 650V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 11A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1.5mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2310 pF @ 25 V |
auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP22N65X2 Produktcode: 197751
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Verschiedene Bauteile > Verschiedene Bauteile 1 |
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IXFP22N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP22N65X2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |