IXFP22N65X2M Ixys Corporation
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 29+ | 5.12 EUR |
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Technische Details IXFP22N65X2M Ixys Corporation
Description: MOSFET N-CH 650V 22A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 5V @ 1.5mA, Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V.
Weitere Produktangebote IXFP22N65X2M nach Preis ab 3.29 EUR bis 8.34 EUR
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IXFP22N65X2M | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 37W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Technology: HiPerFET™; X2-Class Anzahl je Verpackung: 1 Stücke |
auf Bestellung 263 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP22N65X2M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 22A; 37W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22A Power dissipation: 37W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 37nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Technology: HiPerFET™; X2-Class |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP22N65X2M | Hersteller : IXYS |
Description: MOSFET N-CH 650V 22A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 11A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220 Isolated Tab Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP22N65X2M | Hersteller : IXYS |
MOSFETs 650V/22A OVERMOLDED TO-220 |
auf Bestellung 284 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP22N65X2M Produktcode: 210072
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IXFP22N65X2M | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) OVERMOLDED TO-220 |
Produkt ist nicht verfügbar |
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IXFP22N65X2M | Hersteller : Littelfuse |
Trans MOSFET N-CH 650V 22A 3-Pin(3+Tab) OVERMOLDED TO-220 |
Produkt ist nicht verfügbar |