auf Bestellung 100 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 23.09 EUR |
| 10+ | 19.81 EUR |
| 50+ | 18.02 EUR |
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Technische Details IXFP26N65X2 IXYS
Description: IXFP26N65X2, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V, Power Dissipation (Max): 460W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V.
Weitere Produktangebote IXFP26N65X2 nach Preis ab 7.16 EUR bis 15.75 EUR
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| IXFP26N65X2 | Hersteller : IXYS |
 IXFP26N65X2 THT N channel transistors |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| IXFP26N65X2 | Hersteller : IXYS |
Description: IXFP26N65X2 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
auf Bestellung 550 Stücke: Lieferzeit 10-14 Tag (e) |
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