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IXFP30N25X3M

IXFP30N25X3M IXYS


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Hersteller: IXYS
Description: MOSFET N-CH 250V 30A TO220
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220 Isolated Tab
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
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Technische Details IXFP30N25X3M IXYS

Description: MOSFET N-CH 250V 30A TO220, Package / Case: TO-220-3 Full Pack, Isolated Tab, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220 Isolated Tab, Vgs(th) (Max) @ Id: 4.5V @ 500µA, Power Dissipation (Max): 36W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.

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IXFP30N25X3M IXFP30N25X3M Hersteller : IXYS Power_Semiconductor_Discrete_MOSFET_IXFP30N25X3M_Datasheet.pdf MOSFETs TO220 250V 30A N-CH X3CLASS
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