
IXFP30N60X IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Reverse recovery time: 145ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXFP30N60X IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Case: TO220AB, On-state resistance: 155mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Power dissipation: 500W, Features of semiconductor devices: ultra junction x-class, Gate charge: 56nC, Reverse recovery time: 145ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXFP30N60X
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IXFP30N60X | Hersteller : IXYS |
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IXFP30N60X | Hersteller : IXYS |
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IXFP30N60X | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO220AB On-state resistance: 155mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 500W Features of semiconductor devices: ultra junction x-class Gate charge: 56nC Reverse recovery time: 145ns |
Produkt ist nicht verfügbar |