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Technische Details IXFP30N60X IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 30A, Case: TO220AB, On-state resistance: 155mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 145ns, Power dissipation: 500W, Features of semiconductor devices: ultra junction x-class, Gate charge: 56nC.
Weitere Produktangebote IXFP30N60X
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXFP30N60X | IXYS |
 MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXFP30N60X | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Case: TO220AB On-state resistance: 155mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 145ns Power dissipation: 500W Features of semiconductor devices: ultra junction x-class Gate charge: 56nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXFP30N60X |
|
Hersteller: IXYS
MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP
MOSFETs DiscMSFT NCh UltrJnct XClass TO-220AB/FP
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXFP30N60X |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH