IXFP38N30X3M IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Gate-source voltage: ±20V
Technology: HiPerFET™; X3-Class
Anzahl je Verpackung: 1 Stücke
auf Bestellung 295 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 4.99 EUR |
| 17+ | 4.39 EUR |
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Technische Details IXFP38N30X3M IXYS
Description: MOSFET N-CH 300V 38A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Power Dissipation (Max): 34W (Tc), Supplier Device Package: TO-220 Isolated Tab, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V.
Weitere Produktangebote IXFP38N30X3M nach Preis ab 4.21 EUR bis 7.5 EUR
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IXFP38N30X3M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 38A Power dissipation: 34W Case: TO220FP On-state resistance: 50mΩ Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Gate-source voltage: ±20V Technology: HiPerFET™; X3-Class |
auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP38N30X3M | Hersteller : IXYS |
MOSFETs TO220 300V 38A N-CH X3CLASS |
auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP38N30X3M | Hersteller : IXYS |
Description: MOSFET N-CH 300V 38A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Power Dissipation (Max): 34W (Tc) Supplier Device Package: TO-220 Isolated Tab Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V |
auf Bestellung 2174 Stücke: Lieferzeit 10-14 Tag (e) |
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