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IXFP4N100PM

IXFP4N100PM IXYS

Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXFP4N100PM_Datasheet.PDF
Hersteller: IXYS
MOSFETs TO220 1KV 4A N-CH POLAR
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100+8.51 EUR
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Technische Details IXFP4N100PM IXYS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 2.1A, Pulsed drain current: 8A, Power dissipation: 40W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 3.3Ω, Mounting: THT, Gate charge: 26nC, Kind of package: tube, Kind of channel: enhancement, Technology: HiPerFET™; Polar™, Reverse recovery time: 300ns.

Weitere Produktangebote IXFP4N100PM

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IXFP4N100PM IXFP4N100PM IXYS IXFP4N100PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXFP4N100PM IXFP4N100PM.pdf
IXFP4N100PM
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.1A
Pulsed drain current: 8A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 3.3Ω
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH