| Anzahl | Preis |
|---|---|
| 1+ | 12.37 EUR |
| 10+ | 9.89 EUR |
| 100+ | 8.01 EUR |
| 500+ | 7.11 EUR |
| 1000+ | 6.65 EUR |
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Technische Details IXFP4N100PM IXYS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W, Type of transistor: N-MOSFET, Technology: HiPerFET™; Polar™, Polarisation: unipolar, Drain-source voltage: 1kV, Drain current: 2.1A, Pulsed drain current: 8A, Power dissipation: 40W, Case: TO220FP, Gate-source voltage: ±20V, On-state resistance: 3.3Ω, Mounting: THT, Gate charge: 26nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 300ns.
Weitere Produktangebote IXFP4N100PM
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IXFP4N100PM | Hersteller : IXYS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 2.1A; Idm: 8A; 40W Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.1A Pulsed drain current: 8A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 3.3Ω Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 300ns |
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