IXFP60N25X3 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 250V 60A TO220AB
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220AB (IXFP)
Vgs(th) (Max) @ Id: 4.5V @ 1.5mA
Power Dissipation (Max): 320W (Tc)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.48 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFP60N25X3 IXYS
Description: MOSFET N-CH 250V 60A TO220AB, Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB (IXFP), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Power Dissipation (Max): 320W (Tc).
Weitere Produktangebote IXFP60N25X3 nach Preis ab 10.36 EUR bis 19.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFP60N25X3 | IXYS |
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXFP60N25X3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 320W Case: TO220AB On-state resistance: 23mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 50nC Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFP60N25X3 |
|
Hersteller: IXYS
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
MOSFETs 250V/60A Ultra Junct ion X3-Class MOSFET
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.81 EUR |
| 10+ | 12.61 EUR |
| 100+ | 10.75 EUR |
| 500+ | 10.36 EUR |
| IXFP60N25X3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)