IXFP60N25X3M IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 95ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 8.34 EUR |
| 11+ | 6.69 EUR |
| 12+ | 6.32 EUR |
| 50+ | 6.18 EUR |
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Technische Details IXFP60N25X3M IXYS
Description: MOSFET N-CH 250V 60A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-220AB (IXFP), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V.
Weitere Produktangebote IXFP60N25X3M nach Preis ab 6.32 EUR bis 13.45 EUR
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IXFP60N25X3M | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 60A Power dissipation: 36W Case: TO220FP On-state resistance: 23mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 95ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP60N25X3M | Hersteller : IXYS |
Description: MOSFET N-CH 250V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-220AB (IXFP) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3610 pF @ 25 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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