IXFP7N100P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 7A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Gate charge: 47nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Kind of package: tube
auf Bestellung 208 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 5.02 EUR |
| 16+ | 4.73 EUR |
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Technische Details IXFP7N100P IXYS
Description: MOSFET N-CH 1000V 7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 6V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V.
Weitere Produktangebote IXFP7N100P nach Preis ab 4.73 EUR bis 8.51 EUR
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IXFP7N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 7A Power dissipation: 300W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Gate charge: 47nC Kind of channel: enhancement Reverse recovery time: 300ns Kind of package: tube Anzahl je Verpackung: 1 Stücke |
auf Bestellung 208 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP7N100P | Hersteller : IXYS |
MOSFETs 7 Amps 1000V |
auf Bestellung 284 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP7N100P | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP7N100P Produktcode: 148332
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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IXFP7N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP7N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP7N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXFP7N100P | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 7A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 6V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V |
Produkt ist nicht verfügbar |