
IXFP7N100P IXYS

Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB
Reverse recovery time: 300ns
Drain-source voltage: 1kV
Drain current: 7A
On-state resistance: 1.9Ω
Type of transistor: N-MOSFET
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 47nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220AB
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
15+ | 5 EUR |
16+ | 4.73 EUR |
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Technische Details IXFP7N100P IXYS
Description: MOSFET N-CH 1000V 7A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 6V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V.
Weitere Produktangebote IXFP7N100P nach Preis ab 4.73 EUR bis 6.79 EUR
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IXFP7N100P | Hersteller : IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 7A; 300W; TO220AB Reverse recovery time: 300ns Drain-source voltage: 1kV Drain current: 7A On-state resistance: 1.9Ω Type of transistor: N-MOSFET Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 47nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220AB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 209 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP7N100P | Hersteller : Ixys Corporation |
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auf Bestellung 224 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP7N100P | Hersteller : IXYS |
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auf Bestellung 294 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP7N100P Produktcode: 148332
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IXFP7N100P | Hersteller : Littelfuse |
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IXFP7N100P | Hersteller : Littelfuse |
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IXFP7N100P | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFP7N100P | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 6V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2590 pF @ 25 V |
Produkt ist nicht verfügbar |