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IXFP8N85X

IXFP8N85X IXYS

littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_8n85x_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 850V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB (IXFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
auf Bestellung 1150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.23 EUR
50+4.15 EUR
100+3.55 EUR
500+3.16 EUR
1000+2.71 EUR
Mindestbestellmenge: 4
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Technische Details IXFP8N85X IXYS

Description: MOSFET N-CH 850V 8A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-220AB (IXFP), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 850 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V.

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IXFP8N85X IXFP8N85X Hersteller : IXYS media-3321477.pdf MOSFET 850V/8A U-Junc X-Cla ss Power MOSFET
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