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IXFQ60N60X

IXFQ60N60X IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4747A97A25820&compId=IXFH(Q)60N60X.pdf?ci_sign=652b35043effc6c134e92b288ed1a1cbb2c6602d Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXFQ60N60X IXYS

Description: MOSFET N-CH 600V 60A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V, Power Dissipation (Max): 890W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 8mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.

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IXFQ60N60X IXFQ60N60X Hersteller : IXYS Description: MOSFET N-CH 600V 60A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 30A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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IXFQ60N60X IXFQ60N60X Hersteller : IXYS media-3319848.pdf MOSFETs DiscMSFT NCh UltrJnctn XClass TO-3P (3)
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IXFQ60N60X IXFQ60N60X Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D4747A97A25820&compId=IXFH(Q)60N60X.pdf?ci_sign=652b35043effc6c134e92b288ed1a1cbb2c6602d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 60A; 890W; TO3P; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 60A
Power dissipation: 890W
Case: TO3P
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 143nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH