IXFQ90N20X3 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P
Type of transistor: N-MOSFET
Power dissipation: 390W
Polarisation: unipolar
Kind of package: tube
Gate charge: 78nC
Technology: HiPerFET™; X3-Class
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO3P
Reverse recovery time: 85ns
Drain-source voltage: 200V
Drain current: 90A
On-state resistance: 12.8mΩ
Anzahl je Verpackung: 1 Stücke
auf Bestellung 54 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 12.13 EUR |
| 9+ | 8.22 EUR |
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Technische Details IXFQ90N20X3 IXYS
Description: MOSFET N-CH 200V 90A TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.5mA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V.
Weitere Produktangebote IXFQ90N20X3 nach Preis ab 8.22 EUR bis 12.13 EUR
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IXFQ90N20X3 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 90A; 390W; TO3P Type of transistor: N-MOSFET Power dissipation: 390W Polarisation: unipolar Kind of package: tube Gate charge: 78nC Technology: HiPerFET™; X3-Class Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO3P Reverse recovery time: 85ns Drain-source voltage: 200V Drain current: 90A On-state resistance: 12.8mΩ |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFQ90N20X3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) TO-3P |
Produkt ist nicht verfügbar |
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IXFQ90N20X3 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 200V 90A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 12.8mOhm @ 45A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.5mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5420 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFQ90N20X3 | Hersteller : IXYS |
MOSFETs TO3P 200V 90A N-CH X3CLASS |
Produkt ist nicht verfügbar |