| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.32 EUR |
| 10+ | 17.33 EUR |
| 120+ | 16.84 EUR |
| 510+ | 16.53 EUR |
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Technische Details IXFQ94N30P3 IXYS
Description: IXYS SEMICONDUCTOR - IXFQ94N30P3 - Leistungs-MOSFET, n-Kanal, 300 V, 94 A, 0.036 ohm, TO-3P, Durchsteckmontage, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 300, Dauer-Drainstrom Id: 94, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 1.04, Gate-Source-Schwellenspannung, max.: 5, Verlustleistung: 1.04, Bauform - Transistor: TO-3P, Anzahl der Pins: 3, Produktpalette: Polar3 HiPerFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.036, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.036, SVHC: No SVHC (12-Jan-2017).
Weitere Produktangebote IXFQ94N30P3 nach Preis ab 15.2 EUR bis 28.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFQ94N30P3 | IXYS |
 Description: MOSFET N-CH 300V 94A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V Power Dissipation (Max): 1040W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFQ94N30P3 |
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Hersteller: IXYS
Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
Description: MOSFET N-CH 300V 94A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 47A, 10V
Power Dissipation (Max): 1040W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5510 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.86 EUR |
| 30+ | 17.65 EUR |
| 120+ | 15.2 EUR |