IXFR102N30P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 224nC
On-state resistance: 36mΩ
Drain current: 60A
Power dissipation: 250W
Drain-source voltage: 300V
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
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Technische Details IXFR102N30P IXYS
Description: MOSFET N-CH 300V 60A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 51A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFR102N30P nach Preis ab 19.98 EUR bis 19.98 EUR
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IXFR102N30P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 300V 60A ISOPLUS247 Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 540 Stücke: Lieferzeit 10-14 Tag (e) |
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