IXFR102N30P Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 60A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 51A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
| Anzahl | Privatkunde |
|---|---|
| 300+ | 23.78 EUR |
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
300 Stücke
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Technische Details IXFR102N30P Littelfuse Inc.
Description: MOSFET N-CH 300V 60A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 51A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IXFR102N30P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXFR102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™ Power dissipation: 250W Gate charge: 224nC Polarisation: unipolar Drain current: 60A Kind of channel: enhancement Drain-source voltage: 300V Type of transistor: N-MOSFET Kind of package: tube Case: ISOPLUS247™ On-state resistance: 36mΩ Mounting: THT |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXFR102N30P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Power dissipation: 250W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; 250W; ISOPLUS247™
Power dissipation: 250W
Gate charge: 224nC
Polarisation: unipolar
Drain current: 60A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Kind of package: tube
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)