IXFR10N100Q IXYS
Hersteller: IXYS
Description: MOSFET N-CH 1000V 9A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXFR10N100Q IXYS
Description: MOSFET N-CH 1000V 9A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFR10N100Q | Hersteller : IXYS |
 MOSFETs MOSFET w/FAST Intrinsic Diode |
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