IXFR140N20P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
Description: MOSFET N-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 5020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 29.66 EUR |
30+ | 24.01 EUR |
120+ | 22.6 EUR |
510+ | 20.48 EUR |
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Technische Details IXFR140N20P IXYS
Description: MOSFET N-CH 200V 90A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.
Weitere Produktangebote IXFR140N20P
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IXFR140N20P | Hersteller : IXYS SEMICONDUCTOR |
Description: IXYS SEMICONDUCTOR - IXFR140N20P - Leistungs-MOSFET, n-Kanal, 200 V, 90 A, 0.022 ohm, ISOPLUS-247, Durchsteckmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 300W Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.022ohm |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR140N20P | Hersteller : Littelfuse | Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXFR140N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 22mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFR140N20P | Hersteller : IXYS | MOSFET 75 Amps 200V 0.018 Rds |
Produkt ist nicht verfügbar |
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IXFR140N20P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 22mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |