Produkte > IXYS > IXFR140N20P
IXFR140N20P

IXFR140N20P IXYS


littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr140n20p_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 200V 90A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
auf Bestellung 5020 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.66 EUR
30+ 24.01 EUR
120+ 22.6 EUR
510+ 20.48 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFR140N20P IXYS

Description: MOSFET N-CH 200V 90A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 45A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V.

Weitere Produktangebote IXFR140N20P

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXFR140N20P IXFR140N20P Hersteller : IXYS SEMICONDUCTOR IXYS-S-A0008595643-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: IXYS SEMICONDUCTOR - IXFR140N20P - Leistungs-MOSFET, n-Kanal, 200 V, 90 A, 0.022 ohm, ISOPLUS-247, Durchsteckmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 200V
rohsCompliant: YES
Dauer-Drainstrom Id: 90A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 300W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.022ohm
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
IXFR140N20P IXFR140N20P Hersteller : Littelfuse te_mosfets_n-channel_hiperfets_ixfr140n20p_datasheet.pdf.pdf Trans MOSFET N-CH 200V 90A 3-Pin(3+Tab) ISOPLUS 247
Produkt ist nicht verfügbar
IXFR140N20P IXFR140N20P Hersteller : IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFR140N20P IXFR140N20P Hersteller : IXYS media-3319875.pdf MOSFET 75 Amps 200V 0.018 Rds
Produkt ist nicht verfügbar
IXFR140N20P IXFR140N20P Hersteller : IXYS IXFR140N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar