IXFR20N80P IXYS
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Case: ISOPLUS247™
Drain current: 10A
Power dissipation: 160W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 570mΩ
| Anzahl | Preis |
|---|---|
| 6+ | 12.01 EUR |
| 7+ | 10.78 EUR |
| 10+ | 9.52 EUR |
| 30+ | 8.57 EUR |
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Technische Details IXFR20N80P IXYS
Description: MOSFET N-CH 800V 11A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 166W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ).
Weitere Produktangebote IXFR20N80P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFR20N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 11A ISOPLUS247 Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS247™ Vgs(th) (Max) @ Id: 5V @ 4mA Power Dissipation (Max): 166W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
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IXFR20N80P | Hersteller : IXYS |
MOSFETs 10 Amps 800V 0.5 Rds |
Produkt ist nicht verfügbar |