auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 15.02 EUR |
| 8+ | 9.64 EUR |
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Technische Details IXFR20N80P IXYS
Description: MOSFET N-CH 800V 11A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V, Power Dissipation (Max): 166W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V.
Weitere Produktangebote IXFR20N80P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFR20N80P | Hersteller : Littelfuse |
 Trans MOSFET N-CH Si 800V 11A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXFR20N80P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 800V 11A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 10A, 10V Power Dissipation (Max): 166W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4680 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFR20N80P | Hersteller : IXYS |
MOSFETs 10 Amps 800V 0.5 Rds |
Produkt ist nicht verfügbar |