IXFR26N100P IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 51.59 EUR |
| 3+ | 46.43 EUR |
| 10+ | 41.03 EUR |
| 30+ | 36.87 EUR |
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Technische Details IXFR26N100P IXYS
Description: MOSFET N-CH 1000V 15A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V.
Weitere Produktangebote IXFR26N100P nach Preis ab 41.03 EUR bis 51.59 EUR
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IXFR26N100P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.43Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 197nC |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFR26N100P | Hersteller : Littelfuse |
Trans MOSFET N-CH Si 1KV 15A 3-Pin(3+Tab) ISOPLUS 247 |
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IXFR26N100P | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 1000V 15A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFR26N100P | Hersteller : IXYS |
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