IXFR36N60P IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 20A ISOPLUS247
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ISOPLUS247™
Vgs(th) (Max) @ Id: 5V @ 4mA
Power Dissipation (Max): 208W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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Technische Details IXFR36N60P IXYS
Description: MOSFET N-CH 600V 20A ISOPLUS247, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: ISOPLUS247™, Vgs(th) (Max) @ Id: 5V @ 4mA, Power Dissipation (Max): 208W (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXFR36N60P
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXFR36N60P | Hersteller : IXYS |
MOSFETs 600V 20A |
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IXFR36N60P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 208W Case: ISOPLUS247™ On-state resistance: 0.2Ω Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhancement |
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