IXFR90N30 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 75A
Power dissipation: 417W
Case: ISOPLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 360nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 300 Stücke
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Technische Details IXFR90N30 IXYS
Description: MOSFET N-CH 300V 75A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V, Power Dissipation (Max): 417W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: ISOPLUS247™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V.
Weitere Produktangebote IXFR90N30
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IXFR90N30 | Hersteller : IXYS |
Description: MOSFET N-CH 300V 75A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 45A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 25 V |
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IXFR90N30 | Hersteller : IXYS |
MOSFET 75 Amps 300V 0.033 Rds |
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IXFR90N30 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 75A; 417W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 75A Power dissipation: 417W Case: ISOPLUS247™ On-state resistance: 36mΩ Mounting: THT Gate charge: 360nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |