auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.47 EUR |
| 10+ | 15.65 EUR |
| 120+ | 15.31 EUR |
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Technische Details IXFT100N30X3HV IXYS
Description: MOSFET N-CH 300V 100A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V.
Weitere Produktangebote IXFT100N30X3HV nach Preis ab 12.8 EUR bis 24.08 EUR
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IXFT100N30X3HV | Hersteller : IXYS |
 Description: MOSFET N-CH 300V 100A TO268HVPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
auf Bestellung 308 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT100N30X3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 100A 3-Pin(2+Tab) TO-268HV |
Produkt ist nicht verfügbar |
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IXFT100N30X3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 100A 3-Pin(2+Tab) TO-268HV |
Produkt ist nicht verfügbar |
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IXFT100N30X3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 300V 100A 3-Pin(2+Tab) TO-268HV |
Produkt ist nicht verfügbar |
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IXFT100N30X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; X3-Class Polarisation: unipolar Drain-source voltage: 300V Drain current: 100A Power dissipation: 480W Case: TO268 Gate-source voltage: ±20V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns |
Produkt ist nicht verfügbar |