IXFT100N30X3HV Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
Description: MOSFET N-CH 300V 100A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 21.96 EUR |
30+ | 14.20 EUR |
120+ | 13.03 EUR |
Produktrezensionen
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Technische Details IXFT100N30X3HV Littelfuse Inc.
Description: MOSFET N-CH 300V 100A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 13.5mOhm @ 50A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V.
Weitere Produktangebote IXFT100N30X3HV nach Preis ab 15.36 EUR bis 22.77 EUR
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IXFT100N30X3HV | Hersteller : IXYS |
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auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT100N30X3HV | Hersteller : Littelfuse |
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IXFT100N30X3HV | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFT100N30X3HV | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |
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IXFT100N30X3HV | Hersteller : IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 100A Power dissipation: 480W Case: TO268 On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns Technology: HiPerFET™; X3-Class Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT100N30X3HV | Hersteller : IXYS |
![]() ![]() Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 100A; 480W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 100A Power dissipation: 480W Case: TO268 On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 130ns Technology: HiPerFET™; X3-Class Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |