IXFT120N15P IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 150nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 150V
Power dissipation: 600W
Kind of package: tube
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.92 EUR |
| 10+ | 12.3 EUR |
| 30+ | 9.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFT120N15P IXYS
Description: MOSFET N-CH 150V 120A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Weitere Produktangebote IXFT120N15P nach Preis ab 14.88 EUR bis 27.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXFT120N15P | IXYS |
MOSFETs 120 Amps 150V 0.016 Rds |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXFT120N15P |
|
Hersteller: IXYS
MOSFETs 120 Amps 150V 0.016 Rds
MOSFETs 120 Amps 150V 0.016 Rds
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.73 EUR |
| 10+ | 20.78 EUR |
| 120+ | 15.77 EUR |
| 510+ | 15.05 EUR |
| 1020+ | 14.88 EUR |