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Technische Details IXFT120N15P Littelfuse
Description: MOSFET N-CH 150V 120A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.
Weitere Produktangebote IXFT120N15P nach Preis ab 9.66 EUR bis 20.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXFT120N15P | Littelfuse |
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268 |
auf Bestellung 240 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT120N15P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268 Mounting: SMD Power dissipation: 600W Gate charge: 150nC Polarisation: unipolar Technology: HiPerFET™; PolarHT™ Drain current: 120A Kind of channel: enhancement Drain-source voltage: 150V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO268 On-state resistance: 16mΩ Reverse recovery time: 200ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT120N15P | Ixys Corporation |
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IXFT120N15P |
![]() |
Hersteller: Littelfuse
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268
auf Bestellung 240 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 240+ | 10.57 EUR |
| IXFT120N15P |
![]() |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: HiPerFET™; PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 16mΩ
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.92 EUR |
| 10+ | 12.3 EUR |
| 30+ | 9.66 EUR |
| IXFT120N15P |
![]() |
Hersteller: Ixys Corporation
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268
Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 20.11 EUR |
| 11+ | 16.33 EUR |
| 30+ | 12.57 EUR |



