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IXFT120N15P

IXFT120N15P IXYS

IXF_120N15P.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
6+12.41 EUR
9+ 8.41 EUR
Mindestbestellmenge: 6
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Technische Details IXFT120N15P IXYS

Description: MOSFET N-CH 150V 120A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V.

Weitere Produktangebote IXFT120N15P nach Preis ab 8.41 EUR bis 26.13 EUR

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IXFT120N15P IXFT120N15P Hersteller : IXYS IXF_120N15P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Mounting: SMD
Case: TO268
Drain-source voltage: 150V
Drain current: 120A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Power dissipation: 600W
Polarisation: unipolar
Kind of package: tube
Gate charge: 150nC
Technology: HiPerFET™; PolarHT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
6+12.41 EUR
9+ 8.41 EUR
Mindestbestellmenge: 6
IXFT120N15P IXFT120N15P Hersteller : IXYS media-3320782.pdf MOSFET 120 Amps 150V 0.016 Rds
auf Bestellung 177 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
2+26.13 EUR
10+ 22.41 EUR
30+ 18.67 EUR
Mindestbestellmenge: 2
IXFT120N15P IXFT120N15P Hersteller : Littelfuse te_mosfets_n-channel_hiperfets_ixf_120n15p_datasheet.pdf.pdf Trans MOSFET N-CH 150V 120A 3-Pin(2+Tab) TO-268
Produkt ist nicht verfügbar
IXFT120N15P IXFT120N15P Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_120n15p_datasheet.pdf.pdf Description: MOSFET N-CH 150V 120A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 500mA, 10V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 25 V
Produkt ist nicht verfügbar