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IXFT120N30X3HV

IXFT120N30X3HV IXYS


IXF_120N30X3_HV.pdf 300VProductBrief.pdf
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Technology: HiPerFET™; X3-Class
auf Bestellung 12 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.78 EUR
10+16.02 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXFT120N30X3HV IXYS

Description: MOSFET N-CH 300V 120A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.

Weitere Produktangebote IXFT120N30X3HV nach Preis ab 19.15 EUR bis 27.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFT120N30X3HV IXFT120N30X3HV Hersteller : IXYS Power_Semiconductor_Discrete_MOSFET_IXFx120N30X3_Datasheet.pdf MOSFETs TO268 300V 120A N-CH X3CLASS
auf Bestellung 637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+26.93 EUR
10+19.57 EUR
120+19.55 EUR
510+19.54 EUR
1020+19.15 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXFT120N30X3HV IXFT120N30X3HV Hersteller : IXYS littelfuse-discrete-mosfets-ixf-120n30x3-datasheet?assetguid=a6aee090-17b8-48bf-a452-f0160a553826 Description: MOSFET N-CH 300V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 118 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+27.42 EUR
30+19.41 EUR
Im Einkaufswagen  Stück im Wert von  UAH