IXFT120N30X3HV IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO268
Mounting: SMD
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO268
Polarisation: unipolar
Reverse recovery time: 145ns
Gate charge: 170nC
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 735W
Kind of package: tube
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Technische Details IXFT120N30X3HV IXYS
Description: MOSFET N-CH 300V 120A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V, Power Dissipation (Max): 735W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V.
Weitere Produktangebote IXFT120N30X3HV nach Preis ab 21.62 EUR bis 40.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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IXFT120N30X3HV | IXYS |
MOSFETs TO268 300V 120A N-CH X3CLASS |
auf Bestellung 1929 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT120N30X3HV | IXYS |
Description: MOSFET N-CH 300V 120A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V Power Dissipation (Max): 735W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V |
auf Bestellung 646 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXFT120N30X3HV |
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Hersteller: IXYS
MOSFETs TO268 300V 120A N-CH X3CLASS
MOSFETs TO268 300V 120A N-CH X3CLASS
auf Bestellung 1929 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 39.54 EUR |
| 10+ | 26.23 EUR |
| IXFT120N30X3HV |
|
Hersteller: IXYS
Description: MOSFET N-CH 300V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
Description: MOSFET N-CH 300V 120A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 60A, 10V
Power Dissipation (Max): 735W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10500 pF @ 25 V
auf Bestellung 646 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 40.38 EUR |
| 30+ | 25.49 EUR |
| 120+ | 22.23 EUR |
| 510+ | 21.62 EUR |