Produkte > IXYS > IXFT12N100Q

IXFT12N100Q IXYS

littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n100q_datasheet.pdf.pdf

Hersteller: IXYS
Description: MOSFET N-CH 1000V 12A TO268
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Tube

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details IXFT12N100Q IXYS

Description: MOSFET N-CH 1000V 12A TO268, Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5.5V @ 4mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.