IXFT140N10P IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Mounting: SMD
Drain current: 140A
Kind of channel: enhancement
Power dissipation: 600W
Type of transistor: N-MOSFET
Case: TO268
Kind of package: tube
Polarisation: unipolar
Gate charge: 155nC
On-state resistance: 11mΩ
Drain-source voltage: 100V
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Technische Details IXFT140N10P IXYS
Description: MOSFET N-CH 100V 140A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 70A, 10V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V.
Weitere Produktangebote IXFT140N10P nach Preis ab 19.89 EUR bis 30.8 EUR
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IXFT140N10P | Hersteller : IXYS |
MOSFETs 140 Amps 100V 0.011 Rds |
auf Bestellung 515 Stücke: Lieferzeit 10-14 Tag (e) |
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