Technische Details IXFT140N20X3HV Littelfuse
Description: MOSFET N-CH 200V 140A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V, Power Dissipation (Max): 520W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V.
Weitere Produktangebote IXFT140N20X3HV
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IXFT140N20X3HV | Hersteller : Littelfuse |
 Trans MOSFET N-CH 200V 140A 3-Pin(2+Tab) TO-268HV |
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IXFT140N20X3HV | Hersteller : IXYS |
Description: MOSFET N-CH 200V 140A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 70A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7660 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFT140N20X3HV | Hersteller : IXYS |
MOSFETs TO268 200V 140A N-CH X3CLASS |
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IXFT140N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO268 Mounting: SMD Drain current: 140A Kind of channel: enhancement Power dissipation: 520W Technology: HiPerFET™; X3-Class Type of transistor: N-MOSFET Case: TO268 Kind of package: tube Polarisation: unipolar Reverse recovery time: 90ns Gate charge: 127nC On-state resistance: 9.6mΩ Gate-source voltage: ±20V Drain-source voltage: 200V |
Produkt ist nicht verfügbar |