IXFT150N17T2 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268
Case: TO268
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 233nC
On-state resistance: 12mΩ
Drain current: 150A
Drain-source voltage: 175V
Power dissipation: 880W
Anzahl je Verpackung: 1 Stücke
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Technische Details IXFT150N17T2 IXYS
Description: MOSFET N-CH 175V 150A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V, Power Dissipation (Max): 880W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 175 V, Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V.
Weitere Produktangebote IXFT150N17T2
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IXFT150N17T2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 175V 150A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V Power Dissipation (Max): 880W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 175 V Gate Charge (Qg) (Max) @ Vgs: 233 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14600 pF @ 25 V |
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IXFT150N17T2 | Hersteller : IXYS |
MOSFET MSFT N-CH TRENCH GATE -GEN2 |
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IXFT150N17T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 175V; 150A; 880W; TO268 Case: TO268 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 233nC On-state resistance: 12mΩ Drain current: 150A Drain-source voltage: 175V Power dissipation: 880W |
Produkt ist nicht verfügbar |