Produkte > IXYS > IXFT15N80Q
IXFT15N80Q

IXFT15N80Q IXYS


littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_15n80q_datasheet.pdf.pdf Hersteller: IXYS
Description: MOSFET N-CH 800V 15A TO268
Packaging: Tube
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXFT15N80Q IXYS

Description: MOSFET N-CH 800V 15A TO268, Packaging: Tube, Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 7.5A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V.

Weitere Produktangebote IXFT15N80Q

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXFT15N80Q IXFT15N80Q Hersteller : IXYS media-3322037.pdf MOSFETs 15 Amps 800V 0.6 Rds
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH