IXFT180N20X3HV Ixys Corporation
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 23.14 EUR |
| 10+ | 20.16 EUR |
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Technische Details IXFT180N20X3HV Ixys Corporation
Description: MOSFET N-CH 200V 180A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V, Power Dissipation (Max): 780W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V.
Weitere Produktangebote IXFT180N20X3HV nach Preis ab 15.57 EUR bis 28.02 EUR
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IXFT180N20X3HV | Hersteller : IXYS |
 Description: MOSFET N-CH 200V 180A TO268HVPackaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 90A, 10V Power Dissipation (Max): 780W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-268HV (IXFT) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V |
auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT180N20X3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 180A 3-Pin(2+Tab) TO-268HV |
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IXFT180N20X3HV | Hersteller : Littelfuse |
Trans MOSFET N-CH 200V 180A 3-Pin(2+Tab) TO-268HV |
Produkt ist nicht verfügbar |
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IXFT180N20X3HV | Hersteller : IXYS |
MOSFETs TO268 200V 180A N-CH X3CLASS |
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IXFT180N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Case: TO268 Mounting: SMD Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±20V Reverse recovery time: 94ns Gate charge: 154nC On-state resistance: 7.5mΩ Drain current: 180A Power dissipation: 780W Technology: HiPerFET™; X3-Class |
Produkt ist nicht verfügbar |