IXFT220N20X3HV IXYS
Hersteller: IXYS
Description: MOSFET N-CH 200V 220A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
Description: MOSFET N-CH 200V 220A TO268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-268HV (IXFT)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 33.97 EUR |
30+ | 28.15 EUR |
120+ | 26.39 EUR |
510+ | 22.52 EUR |
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Technische Details IXFT220N20X3HV IXYS
Description: MOSFET N-CH 200V 220A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 6.2mOhm @ 110A, 10V, Power Dissipation (Max): 960W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V.
Weitere Produktangebote IXFT220N20X3HV nach Preis ab 38.43 EUR bis 49.82 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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IXFT220N20X3HV | Hersteller : IXYS | MOSFET MSFT N-CH ULTRA JNCT X3 3&44 |
auf Bestellung 509 Stücke: Lieferzeit 14-28 Tag (e) |
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IXFT220N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Kind of package: tube Mounting: SMD Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT220N20X3HV | Hersteller : Littelfuse | Trans MOSFET N-CH 200V 220A 3-Pin(2+Tab) TO-268HV |
Produkt ist nicht verfügbar |
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IXFT220N20X3HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO268 Kind of package: tube Mounting: SMD Power dissipation: 960W Polarisation: unipolar Gate charge: 204nC Technology: HiPerFET™; X3-Class Kind of channel: enhanced Gate-source voltage: ±20V Case: TO268 Reverse recovery time: 116ns Drain-source voltage: 200V Drain current: 220A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |