IXFT23N60Q IXYS
Hersteller: IXYS
Description: MOSFET N-CH 600V 23A TO268
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Packaging: Box
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-268AA
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Technische Details IXFT23N60Q IXYS
Description: MOSFET N-CH 600V 23A TO268, Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Vgs(th) (Max) @ Id: 4.5V @ 4mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Box, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA.