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Technische Details IXFT24N90P IXYS
Description: MOSFET N-CH 900V 24A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFT24N90P nach Preis ab 15.03 EUR bis 27.37 EUR
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IXFT24N90P | Hersteller : IXYS |
 Description: MOSFET N-CH 900V 24A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
auf Bestellung 405 Stücke: Lieferzeit 10-14 Tag (e) |
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