IXFT24N90P IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Power dissipation: 660W
Case: TO268
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Drain current: 24A
On-state resistance: 0.42Ω
Gate-source voltage: ±30V
Reverse recovery time: 300ns
Kind of channel: enhancement
Drain-source voltage: 900V
Polarisation: unipolar
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.46 EUR |
| 6+ | 13.67 EUR |
| 10+ | 13.16 EUR |
| 30+ | 13.14 EUR |
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Technische Details IXFT24N90P IXYS
Description: MOSFET N-CH 900V 24A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-268AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFT24N90P nach Preis ab 13.14 EUR bis 27.35 EUR
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IXFT24N90P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Power dissipation: 660W Case: TO268 Mounting: SMD Gate charge: 130nC Kind of package: tube Drain current: 24A On-state resistance: 0.42Ω Gate-source voltage: ±30V Reverse recovery time: 300ns Kind of channel: enhancement Drain-source voltage: 900V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 251 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFT24N90P | Hersteller : Ixys Corporation |
Trans MOSFET N-CH 900V 24A 3-Pin(2+Tab) TO-268 |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT24N90P | Hersteller : IXYS |
Description: MOSFET N-CH 900V 24A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-268AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
auf Bestellung 419 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT24N90P | Hersteller : IXYS |
MOSFETs PolarHV HiPerFETs 500V-1.2Kv Red Rds |
auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT24N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 24A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT24N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 24A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |