IXFT24N90P IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 296 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 19.69 EUR |
| 5+ | 14.77 EUR |
| 30+ | 14.54 EUR |
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Technische Details IXFT24N90P IXYS
Description: MOSFET N-CH 900V 24A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V, Power Dissipation (Max): 660W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 1mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V.
Weitere Produktangebote IXFT24N90P nach Preis ab 14.54 EUR bis 40.69 EUR
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IXFT24N90P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 24A Power dissipation: 660W Case: TO268 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
auf Bestellung 296 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFT24N90P | Hersteller : IXYS |
Description: MOSFET N-CH 900V 24A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 12A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 1mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFT24N90P | Hersteller : IXYS |
MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds |
auf Bestellung 162 Stücke: Lieferzeit 14-28 Tag (e) |
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IXFT24N90P | Hersteller : Littelfuse |
Trans MOSFET N-CH 900V 24A 3-Pin(2+Tab) TO-268 |
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