auf Bestellung 6210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 17.37 EUR |
| 840+ | 16.58 EUR |
| 1500+ | 15.81 EUR |
| 3000+ | 15.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXFT26N100XHV Littelfuse
Description: MOSFET N-CH 1000V 26A TO268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V, Power Dissipation (Max): 860mW (Ta), Vgs(th) (Max) @ Id: 6V @ 4mA, Supplier Device Package: TO-268HV (IXFT), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V.
Weitere Produktangebote IXFT26N100XHV nach Preis ab 15.18 EUR bis 30.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXFT26N100XHV | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 26A 3-Pin(2+Tab) TO-268HV |
auf Bestellung 6210 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IXFT26N100XHV | Hersteller : IXYS |
MOSFETs 1000V 26A TO-268HV Power MOSFET |
auf Bestellung 265 Stücke: Lieferzeit 234-238 Tag (e) |
|
||||||||||
 |
IXFT26N100XHV | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 26A TO268HV Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V Power Dissipation (Max): 860mW (Ta) Vgs(th) (Max) @ Id: 6V @ 4mA Supplier Device Package: TO-268HV (IXFT) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
Produkt ist nicht verfügbar |