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Technische Details IXFT26N100XHV IXYS
Description: MOSFET N-CH 1000V 26A TO268HV, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-268HV (IXFT), Vgs(th) (Max) @ Id: 6V @ 4mA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube.
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IXFT26N100XHV | Hersteller : IXYS |
 Description: MOSFET N-CH 1000V 26A TO268HVInput Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 10 V Drain to Source Voltage (Vdss): 1000 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-268HV (IXFT) Vgs(th) (Max) @ Id: 6V @ 4mA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube |
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