auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 24.52 EUR |
| 10+ | 19.91 EUR |
| 30+ | 18.48 EUR |
| 60+ | 17.69 EUR |
| 120+ | 16.51 EUR |
| 270+ | 16.03 EUR |
| 510+ | 15.88 EUR |
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Technische Details IXFT30N50Q3 IXYS
Description: MOSFET N-CH 500V 30A TO268, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V, Power Dissipation (Max): 690W (Tc), Vgs(th) (Max) @ Id: 6.5V @ 4mA, Supplier Device Package: TO-268AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.
Weitere Produktangebote IXFT30N50Q3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXFT30N50Q3 | Hersteller : Littelfuse |
 Trans MOSFET N-CH 500V 30A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT30N50Q3 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 30A 3-Pin(2+Tab) TO-268 |
Produkt ist nicht verfügbar |
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IXFT30N50Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 62nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFT30N50Q3 | Hersteller : IXYS |
Description: MOSFET N-CH 500V 30A TO268 Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 15A, 10V Power Dissipation (Max): 690W (Tc) Vgs(th) (Max) @ Id: 6.5V @ 4mA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFT30N50Q3 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 690W Case: TO268 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 62nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |